Product Info: |
Specifications- Mfr Part Number: MZ-V7S1T0B/AM
- Capacity: 1TB
- Form Factor: M.2 2280
- Interface: PCIe Gen 3.0 x4, NVMe 1.3
- NAND Flash: Samsung V-NAND 3-bit MLC
- Controller: Samsung Phoenix Controller
- Cache Memory: Samsung 1GB Low Power DDR4 SDRAM
- Performance:
- Sequential Read Speed: Up to 3,500 MB/s
- Sequential Write Speed: Up to 3,300 MB/s
- 4K Random Read Speed (QD1): Up to 19K IOPS
- 4K Random Write Speed (QD1): Up to 60K IOPS
- 4K Random Read Speed (QD32): Up to 600K IOPS
- 4K Random Write Speed (QD32): Up to 550K IOPS
- MTBF: 1,500,000 hours
- Power Consumption:
- Average: 6W
- Maximum: 9W (Burst mode)
- Idle: 30mW (max)
- Shock: 1,500 G & 0.5 ms (Half sine)
- Temperature: 0 - 70 °C Operating Temperature
- Dimensions (WxDxH): 80.15 x 2.38 x 22.15 mm
- Weight: 8.0 g (Max)
* Product descriptions and part numbers are subject to change, and may not reflect manufacturer product changes. Please check the manufacturer's website and use the item's manufacturer part number to find the most up to date product description. |
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Operation Change Notification
